Towards a realistic GaAs-spin qubit device for a classical error-corrected quantum memory

Abstract

Based on numerically-optimized real-device gates and parameters we study the performance of the phase-flip (repetition) code on a linear array of Gallium Arsenide (GaAs) quantum dots hosting singlet-triplet qubits. We first examine the expected performance of the code using simple error models of circuit-level and phenomenological noise, reporting, for example, a circuit-level depolarizing noise threshold of approximately 3%. We then perform density-matrix simulations using a maximum-likelihood and minimum-weight matching decoder to study the effect of real-device dephasing, read-out error, quasi-static as well as fast gate noise. Considering the trade-off between qubit read-out error and dephasing time (T2) over measurement time, we identify a sub-threshold region for the phase-flip code which lies within experimental reach.

22 pages

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Cited by in corpus (5)

• Closed-loop control of a GaAs-based singlet-triplet spin qubit with 99.5% gate fidelity and low leakage
• Accurate optimal quantum error correction thresholds from coherent information
• Fundamental thresholds of realistic quantum error correction circuits from classical spin models
• Coherent errors in stabilizer codes caused by quasistatic phase damping
• Break-even point of the quantum repetition code