Flopping-mode electron dipole spin resonance in the strong-driving regime

Abstract

Achieving high fidelity control of spin qubits with conventional electron dipole spin resonance (EDSR) requires large magnetic field gradients of about 1 mT/nm, which also couple the qubit to charge noise, and large drive amplitudes of order 1 mV. The flopping-mode is an alternative method to drive EDSR of an electron in a double quantum dot, where the large displacement between both dots increases the driving efficiency. We propose to operate the flopping-mode in the strong-driving regime to use the full magnetic field difference between the two dots. In simulations, the reduced required magnetic field gradients suppress the infidelity contribution of charge noise by more than two orders of magnitude, while providing Rabi frequencies of up to 60 MHz. However, the near degeneracy of the conduction band in silicon introduces a valley degree of freedom that can degrade the performance of the strong-driving mode. This necessitates a valley-dependent pulse optimization and makes operation to the strong-driving regime questionable.

18 pages, 10 figures, Source Code at https://github.com/qutech/qopt-applications

References in corpus (22)

• Coherent control of a single electron spin with electric fields
• Semiconductor Spin Qubits
• Computing with spin qubits at the surface code error threshold
• Fast universal quantum control above the fault-tolerance threshold in silicon
• Universal control of a six-qubit quantum processor in silicon
• Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit
• Two-qubit silicon quantum processor with operation fidelity exceeding 99%
• Strong Coupling of a Single Electron in Silicon to a Microwave Photon
• Strong Coupling Cavity QED with Gate-Defined Double Quantum Dots Enabled by a High Impedance Resonator
• Input-output theory for spin-photon coupling in Si double quantum dots
• Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture
• Physical mechanisms of interface-mediated intervalley coupling in Si
• Spiderweb array: A sparse spin-qubit array
• A shuttling-based two-qubit logic gate for linking distant silicon quantum processors
• Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
• Spin relaxation in a Si quantum dot due to spin-valley mixing
• SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits
• Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well
• A natural heavy-hole flopping mode qubit in germanium
• Transfer of a quantum state from a photonic qubit to a gate-defined quantum dot
• qopt: An experiment-oriented Qubit Simulation and Quantum Optimal Control Package
• Optimal Control of the Operating Regime of a Single Electron Double Quantum Dot

Cited by in corpus (6)

• Modular nanomagnet design for spin qubits confined in a linear chain
• Photo-assisted spin transport in double quantum dots with spin-orbit interaction
• Controllable single spin evolution at sub-harmonics of electric dipole spin resonance enhanced by four-level Landau-Zener-St{ü}ckelberg-Majorana interference
• The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe
• Quantum gates in coupled quantum dots controlled by coupling modulation
• Sweet-spot protection of hole spins in sparse arrays via spin-dependent magnetotunneling