most citedRF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot

8 citations · 8 across the 2 of their papers we have counts for

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2 papers

cond-mat.mes-hall2021

4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot

Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato +5

We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two…

cond-mat.mes-hall2020★ 8 cited

RF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot

Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato +3

We have embedded a physically defined p-channel silicon MOS quantum dot (QD) device into an impedance transformer RC circuit. To decrease the parasitic capacitance and surpass the…