Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells
arXiv:2205.04828 · doi:10.1088/1367-2630/acbab7
Abstract
We study the evolution of the quantum scattering time by gate voltage training in the topological insulator based on InAs/GaSb/InAs trilayer quantum wells. Depending on the minimal gate voltage applied during a gate voltage sweep cycle, the quantum scattering time can be improved by 50 % from 0.08 ps to 0.12 ps albeit the transport scattering time is rather constant around 1.0 ps. The ratio of the quantum scattering time versus transport scattering time scales linearly with the charge carrier density and varies from 10 to 30, indicating Coulombic scattering as the dominant scattering mechanism. Our findings may enable to improve the residual bulk conductivity issue and help in observing helical edge channels in topological insulators based on InAs/GaSb quantum well heterostructures even for macroscopic devices.
References in corpus (20)
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
- Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Observation of Quantum Spin Hall States in InAs/GaSb Bilayers under Broken Time-Reversal Symmetry
- Helical edge resistance introduced by charge puddles
- Single particle relaxation time versus transport scattering time in a 2D graphene layer
- Perfect Andreev Reflection of Helical Edge Modes in InAs/GaSb Quantum Wells
- The quantum scattering time and its implications on scattering sources in graphene (Supplementary)
- The quantum scattering time and its implications on scattering sources in graphene
- Resistance of helical edges formed in a semiconductor heterostructure
- Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
- Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells
- Non-local transport via edge-states in InAs/GaSb coupled quantum wells
- Edge transport in InAs and InAs/GaSb quantum wells
- Large gap quantum spin Hall insulator, massless Dirac fermions and bilayer graphene analogue in InAs/Ga(In)Sb heterostructures
- Experimental Signatures of the Inverted Phase in InAs/GaSb Coupled Quantum Wells
- Massless Dirac fermions in III-V semiconductor quantum wells
- Quantum lifetime of 2D electron in magnetic field
- Gate-tunable Electronic Transport in p-type GaSb Quantum Wells