activity
20112023
most citedPeriodic squeezing in a polariton Josephson junction

37 citations · 112 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2023★ 14 cited

Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range

Paweł Wyborski, Michał Gawełczyk, Paweł Podemski +6

Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in…

cond-mat.mes-hall2022★ 5 cited

Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells

M. Meyer, S. Schmid, F. Jabeen +3

We study the evolution of the quantum scattering time by gate voltage training in the topological insulator based on InAs/GaSb/InAs trilayer quantum wells. Depending on the minimal…

physics.optics2022★ 9 cited

Grating-based microcavity with independent control of resonance energy and linewidth for non-Hermitian polariton system

Jiaqi Hu, Nathanial Lydick, Zhaorong Wang +4

Exciton-polaritons have become an emerging platform for implementing non-Hermitian physics. The implementation commonly requires control of both the real and imaginary parts of the…

cond-mat.quant-gas2019★ 5 cited

Anderson localisation in steady states of microcavity polaritons

Thomas J. Sturges, Mitchell D. Anderson, Adam Buraczewski +6

We present an experimental signature of the Anderson localisation of microcavity polaritons, and provide a systematic study of the dependence on disorder strength. We reveal a cont…

quant-ph2016★ 37 cited

Periodic squeezing in a polariton Josephson junction

Albert F. Adiyatullin, Mitchell D. Anderson, Hugo Flayac +5

The use of a Kerr nonlinearity to generate squeezed light is a well-known way to surpass the quantum noise limit along a given field quadrature. Nevertheless, in the most common re…

cond-mat.mtrl-sci2013★ 15 cited

Electrical transport in C-doped GaAs nanowires: surface effects

Alberto Casadei, Jil Schwender, Eleonora Russo-Averchi +7

The resistivity and the mobility of Carbon doped GaAs nanowires have been studied for different doping concentrations. Surface effects have been evaluated by comparing upassivated…

cond-mat.mtrl-sci2012★ 5 cited

The Mn site in Mn-doped Ga-As nanowires: an EXAFS study

F. d'Acapito, M. Rovezzi, F. Boscherini +5

We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has been obtained either via the diffusion of the Mn used as seed for the nanowire grow…

cond-mat.mtrl-sci2011★ 22 cited

Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires

Damien Lucot, Fauzia Jabeen, Jean-Christophe Harmand +4

We present an original approach to fabricate single GaAs/AlGaAs core-shell nanowire with robust and reproducible transport properties. The core-shell structure is buried in an insu…