activity
20242026
most citedCoexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells

7 citations · 12 across the 3 of their papers we have counts for

collaborators

4 papers

cond-mat.mes-hall2026

Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators

Manuel Meyer, Tobias Fähndrich, Sebastian Schmid +12

Quantum spin Hall transport in InAs/GaInSb-based two-dimensional topological insulators can be limited by parasitic bulk and edge contributions. We demonstrate that these limitatio…

cond-mat.mes-hall2025

Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics

Manuel Meyer, Jonas Baumbach, Sergey Krishtopenko +13

The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional…

cond-mat.mes-hall20245 cited

Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence

S. Benlenqwanssa, S. S. Krishtopenko, M. Meyer +13

We present a multi-probe transport analysis that effectively separates bulk and edge currents in large Hall bar devices with standard geometries. Applied to transport measurements…

cond-mat.mes-hall20247 cited

Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells

Manuel Meyer, Tobias Fähndrich, Sebastian Schmid +7

We report on the coexistence of both normal and topological insulating phases in InAs/GaSb bilayer quantum well induced by the built-in electric field tuned optically and electrica…