Quantum lifetime of 2D electron in magnetic field
arXiv:1110.4022 · doi:10.1103/PhysRevB.85.115312
Abstract
The lifetime of two dimensional electrons in GaAs quantum wells, placed in weak quantizing magnetic fields, is measured using a simple transport method in broad range of temperatures from 0.3 K to 20 K. The temperature variations of the electron lifetime are found to be in good agreement with conventional theory of electron-electron scattering in 2D systems.
7 pages, 5 figures
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Cited by in corpus (7)
- Nonequilibrium phenomena in high Landau levels
- Microwave Photoresistance in an Ultrahigh Quality GaAs Quantum Well
- Magneto-intersubband resistance oscillations in GaAs quantum wells placed in a tilted magnetic field
- Positive Quantum Magnetoresistance in Tilted Magnetic Field
- Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells
- Temperature Damping of Magneto-Intersubband Resistance Oscillations in Magnetically Entangled Subbands
- Giant Shubnikov-de Haas Oscillations with V-Shaped Minima in a High-Mobility Two-Dimensional Electron Gas: Experiment and Phenomenological Model