Temperature Dependence of Magnetophonon Resistance Oscillations in GaAs/AlAs Heterostructures at High Filling Factors

Abstract

The temperature dependence of phonon-induced resistance oscillations has been investigated in two-dimensional electron system with moderate mobility at large filling factors at temperature range T = 7.4 - 25.4 K. The amplitude of phonon-induced oscillations has been found to be governed by quantum relaxation time which is determined by electron-electron interaction effects. This is in agreement with results recently obtained in ultra-high mobility two-dimensional electron system with low electron density [A. T. Hatke et al., Phys. Rev. Lett. 102, 086808 (2009)]. The shift of the main maximum of the magnetophonon resistance oscillations to higher magnetic fields with increasing temperature is observed.

5 pages, 4 figures

References in corpus (3)

• Temperature Dependence of Microwave Photoresistance in 2D Electron Systems
• Role of electron-electron interactions in nonlinear transport in 2D electron systems
• Nonlinear resistance of 2D electrons in crossed electric and magnetic fields

Cited by in corpus (9)

• Nonequilibrium phenomena in high Landau levels
• Giant microwave photoresistivity in a high-mobility quantum Hall system
• Hall field-induced resistance oscillations in tilted magnetic fields
• Interference of magnetointersubband and phonon-induced resistance oscillations in single GaAs quantum wells with two populated subbands
• Quantum lifetime of 2D electron in magnetic field
• Microwave photoresistance in a two-dimensional electron gas with separated Landau levels
• Microwave-induced magnetoresistance of two-dimensional electrons interacting with acoustic phonons
• Phase of phonon-induced resistance oscillations in a high-mobility two-dimensional electron gas
• Magnetophonon oscillations of thermoelectric power and combined resonance in two-subband electron systems