Aharonov Bohm effect in 2D topological insulator
arXiv:1501.03652 · doi:10.1016/j.ssc.2014.12.017
Abstract
We present magnetotransport measurements in HgTe quantum well with inverted band structure, which expected to be a two-dimensional topological insulator having the bulk gap with helical gapless states at the edge. The negative magnetoresistance is observed in the local and nonlocal resistance configuration followed by the periodic oscillations damping with magnetic field. We attribute such behaviour to Aharonov-Bohm effect due to magnetic flux through the charge carrier puddles coupled to the helical edge states. The characteristic size of these puddles is about 100 nm.
6 pages, 6 figures
References in corpus (9)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Nonlocal edge state transport in the quantum spin Hall state
- Kondo effect in the helical edge liquid of the quantum spin Hall state
- Edge Dynamics in a Quantum Spin Hall State: Effects from Rashba Spin-Orbit Interaction
- Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells
- Magnetic properties of HgTe quantum wells
- Magnetic field induced localization in 2D topological insulators
- Linear magnetoresistance in HgTe quantum wells