Two-dimensional topological insulator state in double HgTe quantum well
arXiv:2004.04062 · doi:10.1103/PhysRevB.101.241302
Abstract
The two-dimensional topological insulator phase has been observed previously in single HgTe-based quantum wells with inverted subband ordering. In double quantum wells (DQWs), coupling between the layers introduces additional degrees of freedom leading to a rich phase picture. By studying local and nonlocal resistance in HgTe-based DQWs, we observe both the gapless semimetal phase and the topological insulator phase, depending on parameters of the samples and according to theoretical predictions. Our work establishes the DQWs as a promising platform for realization of multilayer topological insulators.
8 pages, 8 figures
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- Multiple crossing of Landau levels of two-dimensional fermions in double HgTe quantum wells
- Interaction dominated transport in 2D conductors: from degenerate to partially-degenerate regime
- Disorder-induced phase transitions in double HgTe quantum wells
- Functionalized Tellurene; a candidate large-gap 2D Topological Insulator
- Interaction-controlled transport in a two-dimensional massless-massive Dirac system: Transition from degenerate to nondegenerate regimes
- Tunable Competing Electronic Orders in Double Quantum Spin Hall Superlattices
- Engineering Majorana Kramers Pairs In Synthetic High Spin Chern Insulators
- Higher-order topological insulator in cubic semiconductor quantum wells