activity
20152024
most citedQuantum anomalous Hall effect from intertwined moiré bands

572 citations · 2.5k across the 20 of their papers we have counts for

collaborators

20 papers

cond-mat.mes-hall2024★ 4 cited

Magneto-Induced Topological Phase Transition in Inverted InAs/GaSb Bilayers

Zhongdong Han, Tingxin Li, Long Zhang +1

We report a magneto-induced topological phase transition in inverted InAs/GaSb bilayers from a quantum spin Hall insulator to a normal insulator. We utilize a dual-gated Corbino de…

cond-mat.mes-hall2023★ 397 cited

Observation of integer and fractional quantum anomalous Hall effects in twisted bilayer MoTe2

Fan Xu, Zheng Sun, Tongtong Jia +13

The interplay between strong correlations and topology can lead to the emergence of intriguing quantum states of matter. One well-known example is the fractional quantum Hall effec…

cond-mat.str-el2023★ 8 cited

Observation of spin polarons in a frustrated moiré Hubbard system

Zui Tao, Wenjin Zhao, Bowen Shen +5

The electron's kinetic energy plays a pivotal role in magnetism. While virtual electron hopping promotes antiferromagnetism in an insulator, the real process usually favors ferroma…

cond-mat.mes-hall2023★ 1 cited

Giant spin Hall effect in AB-stacked MoTe2/WSe2 bilayers

Zui Tao, Bowen Shen, Wenjin Zhao +9

The spin Hall effect (SHE), in which electrical current generates transverse spin current, plays an important role in spintronics for the generation and manipulation of spin-polari…

cond-mat.mes-hall2022★ 14 cited

Valley-coherent quantum anomalous Hall state in AB-stacked MoTe2/WSe2 bilayers

Zui Tao, Bowen Shen, Shengwei Jiang +11

Moiré materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is qu…

cond-mat.mes-hall2022★ 35 cited

Intrinsic spin Hall torque in a moire Chern magnet

C. L. Tschirhart, Evgeny Redekop, Lizhong Li +9

In spin torque magnetic memories, electrically actuated spin currents are used to switch a magnetic bit. Typically, these require a multilayer geometry including both a free ferrom…

cond-mat.mes-hall2021★ 23 cited

Quantum oscillations in 2D insulators induced by graphite gates

Jiacheng Zhu, Tingxin Li, Andrea F. Young +2

We demonstrate a mechanism for magnetoresistance oscillations in insulating states of two-dimensional (2D) materials arising from the interaction of the 2D layer and proximal graph…

cond-mat.mes-hall2021★ 572 cited

Quantum anomalous Hall effect from intertwined moiré bands

Tingxin Li, Shengwei Jiang, Bowen Shen +8

Electron correlation and topology are two central threads of modern condensed matter physics. Semiconductor moiré materials provide a highly tunable platform for studies of electro…

cond-mat.str-el2021★ 331 cited

Continuous Mott transition in semiconductor moiré superlattices

Tingxin Li, Shengwei Jiang, Lizhong Li +9

The evolution of a Landau Fermi liquid into a nonmagnetic Mott insulator with increasing electronic interactions is one of the most puzzling quantum phase transitions in physics. T…

cond-mat.str-el2021★ 67 cited

Charge-order-enhanced capacitance in semiconductor moiré superlattices

Tingxin Li, Jiacheng Zhu, Yanhao Tang +5

Van der Waals moiré materials have emerged as a highly controllable platform to study the electronic correlation phenomena. In particular, robust correlated insulating states have…

cond-mat.mes-hall2020★ 235 cited

Stripe phases in WSe2/WS2 moiré superlattices

Chenhao Jin, Zui Tao, Tingxin Li +10

Stripe phases, in which the rotational symmetry of charge density is spontaneously broken, occur in many strongly correlated systems with competing interactions. One representative…

cond-mat.mtrl-sci2019★ 13 cited

WSe2/WS2 moiré superlattices: a new Hubbard model simulator

Yanhao Tang, Lizhong Li, Tingxin Li +8

The Hubbard model, first formulated by physicist John Hubbard in the 1960s, is a simple theoretical model of interacting quantum particles in a lattice. The model is thought to cap…

cond-mat.mes-hall2019★ 532 cited

Pressure-controlled interlayer magnetism in atomically thin CrI3

Tingxin Li, Shengwei Jiang, Nikhil Sivadas +9

Stacking order can significantly influence the physical properties of two-dimensional (2D) van der Waals materials. The recent isolation of atomically thin magnetic materials opens…

cond-mat.mes-hall2019★ 36 cited

Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells

Zhongdong Han, Tingxin Li, Long Zhang +2

We observe the magnetic oscillation of electric conductance in the two-dimensional InAs/GaSb quantum spin Hall insulator. Its insulating bulk origin is unambiguously demonstrated b…

cond-mat.mes-hall2018

Observation of the nonlinear anomalous Hall effect in 2D WTe2

Kaifei Kang, Tingxin Li, Egon Sohn +2

The Hall effect occurs only in systems with broken time-reversal symmetry, such as solids under an external magnetic field in the ordinary Hall effect and magnetic materials in the…

cond-mat.supr-con2018★ 20 cited

Transport evidence for three dimensional topological superconductivity in doped -PdBi

Ayo Kolapo, Tingxin Li, Pavan Hosur +1

Interest in topological states of matter exploded over a decade ago with the theoretical prediction and experimental detection of three-dimensional topological insulators, especial…

cond-mat.mes-hall2018

Microwave Photocurrent from the Helical Edge state of InAs/GaInSb Bilayers

Jie Zhang, Tingxin Li, Rui-Rui Du +1

We measure microwave photocurrent in devices made from InAs/GaInSb bilayers where both insulating bulk state and conducting edge state were observed in the inverted-band regime, co…

cond-mat.mes-hall2017★ 28 cited

Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb

Tingxin Li, Pengjie Wang, Gerard Sullivan +2

We report low-temperature transport measurements in strained InAs/Ga0.68In0.32Sb quantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature…

cond-mat.mes-hall2016★ 72 cited

Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators

Lingjie Du, Tingxin Li, Wenkai Lou +8

We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the…

cond-mat.mes-hall2015★ 154 cited

Observation of a Helical Luttinger-Liquid in InAs/GaSb Quantum Spin Hall Edges

Tingxin Li, Pengjie Wang, Hailong Fu +8

We report on the observation of a helical Luttinger-liquid in the edge of InAs/GaSb quantum spin Hall insulator, which shows characteristic suppression of conductance at low temper…