Magneto-Induced Topological Phase Transition in Inverted InAs/GaSb Bilayers

Abstract

We report a magneto-induced topological phase transition in inverted InAs/GaSb bilayers from a quantum spin Hall insulator to a normal insulator. We utilize a dual-gated Corbino device in which the degree of band inversion, or equivalently the electron and hole densities, can be continuously tuned. We observe a topological phase transition around the magnetic field where a band crossing occurs, that is accompanied by a bulk-gap closure characterized by a bulk conductance peak (BCP). In another set of experiments, we study the transition under a tilted magnetic field (tilt angle $\theta$). We observe the characteristic magneto-conductance around BCP as a function of $\theta$, which dramatically depends on the density of the bilayers. In a relatively deep-inversion (hence a higher density) regime, where the electron-hole hybridization dominates the excitonic interaction, the BCP grows with $\theta$. On the contrary, in a shallowly-inverted (a lower density) regime, where the excitonic interaction dominates the hybridization, the BCP is suppressed indicating a smooth crossover without a gap closure. This suggests the existence of a low-density, correlated insulator with spontaneous symmetry breaking near the critical point. Our highly controllable electron-hole system offers an ideal platform to study interacting topological states as proposed by recent theories.

arXiv comment15+15 pages, 4+9 figures

References in corpus (30)

• Quantum Spin Hall Effect in Graphene
• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• $Z_2$ Topological Order and the Quantum Spin Hall Effect
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Topological Crystalline Insulators
• Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
• Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• Surface States of the Topological Insulator Bi_{1-x}Sb_x
• Quantum anomalous Hall effect from intertwined moiré bands
• Observation of Quantum Spin Hall States in InAs/GaSb Bilayers under Broken Time-Reversal Symmetry
• Gate-Tuned Spontaneous Exciton Insulator in Double-Quantum Wells
• Quantum Oscillations of Electrical Resistivity in an Insulator
• Quantum oscillation in narrow-gap topological insulators
• Interplay of exciton condensation and quantum spin Hall effect in InAs/GaSb bilayers
• Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
• Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells
• Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
• Excitonic topological order in imbalanced electron-hole bilayers
• Time-Reversal Symmetry-Breaking Nematic Insulators near Quantum Spin Hall Phase Transitions
• Anomalous Quantum Oscillations of Interacting Electron-hole Gases in Inverted Type-II InAs/GaSb Quantum Wells
• Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells
• Disorder and magnetic-field induced breakdown of helical edge conduction in an inverted electron-hole bilayer
• Magnetotransport of coupled electron-holes
• Effective g-factors of carriers in inverted InAs/GaSb bilayers
• Energy gap tuning and gate-controlled topological phase transition in InAs/In${}_x$Ga${}_{1-x}$Sb composite quantum wells
• In-plane magnetic field induced density wave states near quantum spin Hall phase transitions
• Interplay of quantum spin Hall effect and spontaneous time-reversal symmetry breaking in electron-hole bilayers I: Transport properties
• Interplay of quantum spin Hall effect and spontaneous time-reversal symmetry breaking in electron-hole bilayers II: Zero-field topological superconductivity
• Quantum oscillations in field-induced correlated insulators of a moiré superlattice