295 citations · 451 across the 7 of their papers we have counts for
7 papers
Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions
Shili Yan, Haitian Su, Dong Pan +8
High-quality free-standing InAs nanosheets are emerging layered semiconductor materials with potentials in designing planar Josephson junction devices for novel physics studies due…
Realization of independent contacts in barrier-separated InAs/GaSb quantum wells
Xingjun Wu, Jianhuan Wang, Miaoling Huang +2
InAs/GaSb double quantum wells (QWs) separated by a 100 Å AlSb middle barrier are grown by molecular beam epitaxy. We report a nanofabrication technique that utilizes the surface F…
Tunneling spectroscopic signatures of charge doping and associated Mott transition in -RuCl in proximity to graphite
Xiaohu Zheng, Ke Jia, Junhai Ren +5
The layered Mott insulator -RuCl has been extensively studied as a potential Kitaev quantum spin liquid candidate. Here, by constructing heterostructures with graphite, we…
Unraveling the Topological Phase of ZrTe via Magneto-infrared Spectroscopy
Y. Jiang, J. Wang, T. Zhao +9
For materials near the phase boundary between weak and strong topological insulators (TIs), their band topology depends on the band alignment, with the inverted (normal) band corre…
Room temperature 2D ferromagnetism in few-layered 1-CrTe
Xingdan Sun, Wanying Li, Xiao Wang +21
Spin-related electronics using two dimensional (2D) van der Waals (vdW) materials as a platform are believed to hold great promise for revolutionizing the next generation spintroni…
Resistive signature of excitonic coupling in an electron-hole double layer with a middle barrier
Xingjun Wu, Wenkai Lou, Kai Chang +2
We study the interlayer scattering mediated by long-range Coulomb interaction between electrons (density n) and holes (p) in a double-layer system. The gated device is made of InAs…
Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
Lingjie Du, Tingxin Li, Wenkai Lou +8
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the…