activity
20082025
most citedOptical nano-imaging of gate-tuneable graphene plasmons

2.1k citations · 2.4k across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2025

Sustainable wafer-scale integration of epitaxial ZnO on silicon for piezoelectric devices

D. Sanchez-Fuentes, R. Desgarceaux, A. Rahal +13

To sustainably support the ongoing energetic transition, we need functional metal oxides capable of converting energy, and produce storage, and sensing devices. However, these mate…

cond-mat.mes-hall2012★ 4 cited

Raman spectrum and optical extinction of graphene buffer layers on the Si-face of 6H-SiC

A. Tiberj, J. R. Huntzinger, N. Camara +2

The buffer layer has been analysed by combined micro-Raman and micro-transmission experiments. The epitaxial graphene growth on the (0001) Si face of 6H-SiC substrates was tuned to…

cond-mat.mtrl-sci2012★ 2.1k cited

Optical nano-imaging of gate-tuneable graphene plasmons

Jianing Chen, Michela Badioli, Pablo Alonso-González +12

The ability to manipulate optical fields and the energy flow of light is central to modern information and communication technologies, as well as quantum information processing sch…

cond-mat.mes-hall2011★ 1 cited

Bottom-gated epitaxial graphene suitable for half-integer quantum metrology ?

B. Jouault, N. Camara, B. Jabakhanji +5

We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated…

cond-mat.mes-hall2011★ 59 cited

Interplay between interferences and electron-electron interactions in epitaxial graphene

B. Jouault, B. Jabakhanji, N. Camara +3

We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak local…

cond-mat.mes-hall2010★ 24 cited

Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices

N. Camara, B. Jouault, A. Caboni +7

Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have b…