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cond-mat.mes-hall2011★ 1 cited
Bottom-gated epitaxial graphene suitable for half-integer quantum metrology ?
B. Jouault, N. Camara, B. Jabakhanji +5
We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated…
cond-mat.mes-hall2011★ 59 cited
Interplay between interferences and electron-electron interactions in epitaxial graphene
B. Jouault, B. Jabakhanji, N. Camara +3
We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak local…