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Raman spectrum and optical extinction of graphene buffer layers on the Si-face of 6H-SiC
A. Tiberj, J. R. Huntzinger, N. Camara +2
The buffer layer has been analysed by combined micro-Raman and micro-transmission experiments. The epitaxial graphene growth on the (0001) Si face of 6H-SiC substrates was tuned to…
Bottom-gated epitaxial graphene suitable for half-integer quantum metrology ?
B. Jouault, N. Camara, B. Jabakhanji +5
We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated…
Interplay between interferences and electron-electron interactions in epitaxial graphene
B. Jouault, B. Jabakhanji, N. Camara +3
We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak local…
Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices
N. Camara, B. Jouault, A. Caboni +7
Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have b…