most citedGrowth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices

24 citations · 24 across the 1 of their papers we have counts for

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1 paper

cond-mat.mes-hall2010★ 24 cited

Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices

N. Camara, B. Jouault, A. Caboni +7

Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have b…