New Synthesis Method for the Growth of Epitaxial Graphene
arXiv:1104.3907 · doi:10.1016/j.elspec.2010.12.034
Abstract
As a viable candidate for an all-carbon post-CMOS electronics revolution, epitaxial graphene has attracted significant attention. To realize its application potential, reliable methods for fabricating large-area single-crystalline graphene domains are required. A new way to synthesize high quality epitaxial graphene, namely "face-to-face" method, has been reported in this paper. The structure and morphologies of the samples are characterized by low-energy electron diffraction, atomic force microscopy, angle-resolved photoemission spectroscopy and Raman spectroscopy. The grown samples show better quality and larger length scales than samples grown through conventional thermal desorption. Moreover the graphene thickness can be easily controlled by changing annealing temperature.
16 pages and 7 figures
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Cited by in corpus (7)
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- Transient Hot Electron Dynamics in Single-Layer TaS
- Magnetic effects in sulfur-decorated graphene
- Pb-intercalated epitaxial graphene on SiC: Full insight into band structure and orbital character of interlayer Pb, and charge transfer into graphene
- Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices