47 citations · 91 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2011★ 1 cited
Bottom-gated epitaxial graphene suitable for half-integer quantum metrology ?
B. Jouault, N. Camara, B. Jabakhanji +5
We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated…
cond-mat.mtrl-sci2008★ 43 cited
Early stage formation of graphene on the C-face of 6H-SiC
N. Camara, G. Rius, J. -R. Huntzinger +5
An investigation of the early stage formation of graphene on the C-face of 6H-SiC is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is…
cond-mat.mtrl-sci2008★ 47 cited
Selective epitaxial growth of graphene on SiC
N. Camara, G. Rius, J. -R. Huntzinger +4
We present an innovative method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned SiC substrate. The methods involves, successively, the sputtering of a…