3.5k citations · 7.4k across the 15 of their papers we have counts for
15 papers
Ultra-high mobility semiconducting epitaxial graphene on silicon carbide
Jian Zhao, Peixun Ji, Yaqi Li +12
Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalizatio…
Slow noncollinear Coulomb scattering in the vicinity of the Dirac point in graphene
J. C. König-Otto, M. Mittendorff, T. Winzer +9
The Coulomb scattering dynamics in graphene in energetic proximity to the Dirac point is investigated by polarization resolved pump-probe spectroscopy and microscopic theory. Colli…
Epitaxial graphene on SiC: 2D sheets, selective growth and nanoribbons
Claire Berger, Dogukan Deniz, Jamey Gigliotti +9
Epitaxial graphene grown on SiC by the confinement controlled sublimation method is reviewed, with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of…
Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics
Renaud Puybaret, Gilles Patriarche, Matthew B. Jordan +7
We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown…
SU(4) symmetry breaking revealed by magneto-optical spectroscopy in epitaxial graphene
Liang Z. Tan, Milan Orlita, Marek Potemski +5
Refined infrared magnetotransmission experiments have been performed in magnetic fields B up to 35 T on a series of multilayer epitaxial graphene samples. Following the main optica…
Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks
Renaud Puybaret, John Hankinson, James Palmer +5
Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbid…