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Quenching of quantum Hall effect and the role of undoped planes in multilayered epitaxial graphene
Pierre Darancet, Nicolas Wipf, Claire Berger +2
We propose a mechanism for the quenching of the Shubnikov de Haas oscillations and the quantum Hall effect observed in epitaxial graphene. Experimental data show that the scatterin…
Few layer graphene on SiC, pyrolitic graphite and graphene: a Raman scattering study
C. Faugeras, A. Nerriere, M. Potemski +4
The results of micro-Raman scattering measurements performed on three different ``graphitic'' materials: micro-structured disks of highly oriented pyrolytic graphite, graphene mult…
Substrate-induced band gap opening in epitaxial graphene
S. Y. Zhou, G. -H. Gweon, A. V. Fedorov +6
Graphene has shown great application potentials as the host material for next generation electronic devices. However, despite its intriguing properties, one of the biggest hurdles…
High-Energy Limit of Massless Dirac Fermions in Multilayer Graphene using Magneto-Optical Transmission Spectroscopy
P. Plochocka, C. Faugeras, M. Orlita +7
We have investigated the absorption spectrum of multilayer graphene in high magnetic fields. The low energy part of the spectrum of electrons in graphene is well described by the r…
Rotational stacking and its electronic effects on graphene films grown on 4H-SiC
J. Hass, F. Varchon, J. E. Millan-Otoya +6
We examine the stacking order of multilayer graphene grown on the SiC surface using low-energy electron diffraction and surface X-ray diffraction. We show that the fi…
Epitaxial graphene
Walt A. de Heer, Claire Berger, Xiaosong Wu +9
Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to t…