96 citations · 309 across the 6 of their papers we have counts for
6 papers
Suppression of 1/f noise in solid state quantum devices by surface spin desorption
S. E. de Graaf, L. Faoro, J. Burnett +5
Noise and decoherence due to spurious two-level systems (TLS) located at material interfaces is a long-standing issue in solid state quantum technologies. Efforts to mitigate the e…
Direct identification of dilute surface spins on AlO: Origin of flux noise in quantum circuits
S. E. de Graaf, A. A. Adamyan, T. Lindström +4
It is universally accepted that noise and decoherence affecting the performance of superconducting quantum circuits are consistent with the presence of spurious two-level systems (…
Angular dependent micro-ESR characterization of a locally doped Gd3+:Al2O3 system
I. S. Wisby, S. E. de Graaf, R. Gwilliam +5
Interfacing rare-earth doped crystals with superconducting circuit architectures provides an attractive platform for quantum memory and transducer devices. Here we present the deta…
Coupling of a locally implanted rare-earth ion ensemble to a superconducting micro-resonator
I. Wisby, S. E. de Graaf, R. Gwilliam +5
We demonstrate the coupling of rare-earth ions locally implanted in a substrate (Gd in AlO) to a superconducting NbN lumped-element micro-resonator. The hybrid d…
Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
C. J. Chua, M. R. Connolly, A. Lartsev +10
We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions…
Weak localization scattering lengths in epitaxial, and CVD graphene
A. M. R. Baker, J. A. Alexander-Webber, T. Altebaeumer +8
Weak localization in graphene is studied as a function of carrier density in the range from 1 x \,cm to 1.43 x \,cm using devices produced by epitax…