activity
20102014
most citedCharge transfer between epitaxial graphene and silicon carbide

168 citations · 340 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2014★ 34 cited

Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene

C. J. Chua, M. R. Connolly, A. Lartsev +10

We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions…

cond-mat.mtrl-sci2011

Doping of epitaxial graphene on SiC intercalated with hydrogen and its magneto-oscillations

S. Kopylov, V. I. Fal'ko, Th. Seyller

We study the charge transfer between a quasi-free-standing monolayer graphene, produced by hydrogen intercalation, and surface acceptor states. We consider two models of acceptor d…

cond-mat.dis-nn2011★ 14 cited

Transport anomaly at the ordering transition for adatoms on graphene

Sergey Kopylov, Vadim Cheianov, Boris L. Altshuler +1

We analyze a manifestation of the partial ordering transition of adatoms on graphene in resistivity measurements. We find that Kekule mosaic ordering of adatoms increases sheet res…

cond-mat.mes-hall2010★ 124 cited

Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

T. J. B. M. Janssen, A. Tzalenchuk, R. Yakimova +4

We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacit…

cond-mat.mtrl-sci2010★ 168 cited

Charge transfer between epitaxial graphene and silicon carbide

Sergey Kopylov, Alexander Tzalenchuk, Sergey Kubatkin +1

We analyse doping of graphene grown on SiC in two models which differ by the source of charge transfered to graphene, namely, from SiC surface and from bulk donors. For each of the…