Influence of spin dynamics of defects on weak localization in paramagnetic 2D metals

Abstract

Spin-flip scattering of charge carriers in metals with magnetic defects leads to the low-temperature saturation of the decoherence time, ${\tau }_{\phi }$, of electrons at the value comparable to their spin relaxation time, ${\tau }_s$. In two-dimensional (2D) conductors such a saturation can be lifted by an in-plane magnetic field, $B_{\parallel }$, which polarizes spins of scatterers without affecting orbital motion of free carriers. Here, we show that in 2D conductors with substantially different values of the g-factors of electrons ($g_e$) and magnetic defects ($g_i$), the decoherence time ${\tau }_{\phi }(B_{\parallel })$ (reflected by the curvature of magnetoconductance) displays an anomaly: it first gets shorter, decaying on the scale $B_{\parallel }\sim \hslash /|g_i-g_e|{\mu }_B{\tau }_s$, before becoming longer at higher values of $B_{\parallel }$.

4 pages, 4 figures

References in corpus (5)

• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Weak localisation magnetoresistance and valley symmetry in graphene
• Weak localisation in graphene flakes
• Defect-mediated spin relaxation and dephasing in graphene
• Influence of impurity spin dynamics on quantum transport in epitaxial graphene

Cited by in corpus (3)

• Interaction-induced metallicity in a two-dimensional disordered non-Fermi liquid
• Quantum corrections to conductivity of disordered electrons due to inelastic scattering off magnetic impurities
• Superconducting Diode Effect in Weak Localization Regime