Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation

Abstract

We present a study of quasi-free-standing monolayer graphene obtained by intercalation of Au atoms at the interface between the carbon buffer layer (Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au intercalation is achieved by deposition of atomically thin Au on the Bu-L followed by annealing at 850 °C in an Argon atmosphere. We explore the intercalation of Au and decoupling of the Bu-L into quasi-free-standing monolayer graphene by surface science characterizations and electron transport in top-gated electronic devices. By gate-dependent magnetotransport we find that the Au-intercalated buffer layer displays all properties of monolayer graphene, namely gate tunable ambipolar transport across the Dirac point, and n- or p-type doping depending on the Au content.

References in corpus (21)

• Doping graphene with metal contacts
• Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation
• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• Weak localisation magnetoresistance and valley symmetry in graphene
• Graphene for spintronics: giant Rashba splitting due to hybridization with Au
• Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons
• The quasi-free-standing nature of graphene on H-saturated SiC(0001)
• The Origin of Doping in Quasi-Free Standing Graphene on Silicon Carbide
• Electronic decoupling of an epitaxial graphene monolayer by gold intercalation
• Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides
• Nonlinear Hall effect and multichannel conduction in LaTiO3/SrTiO3 superlattices
• Charge transfer between epitaxial graphene and silicon carbide
• z/-z Symmetry of spin-orbit coupling and weak localization in graphene
• Semiconductor to metal transition in two-dimensional gold and its van der Waals heterostack with graphene
• Uniform doping of graphene close to the charge neutrality point by polymer-assisted spontaneous assembly of molecular dopants
• Proximity induced spin orbit effects in graphene on Au
• Stacking domains in graphene on silicon carbide: a pathway for intercalation
• Impact of graphene quantum capacitance on transport spectroscopy
• Influence of impurity spin dynamics on quantum transport in epitaxial graphene
• Chemical sensing with atomically-thin metals templated by a two-dimensional insulator
• Magnetic-field driven ambipolar quantum Hall effect in epitaxial graphene close to the charge neutrality point