Relaxation mechanism for electron spin in the impurity band of n-doped semiconductors
arXiv:cond-mat/0701329 · doi:10.1103/PhysRevB.76.085209
Abstract
We propose a mechanism to describe spin relaxation in n-doped III-V semiconductors close to the Mott metal-insulator transition. Taking into account the spin-orbit interaction induced spin admixture in the hydrogenic donor states, we build a tight-binding model for the spin-dependent impurity band. Since the hopping amplitudes with spin flip are considerably smaller than the spin conserving counterparts, the resulting spin lifetime is very large. We estimate the spin lifetime from the diffusive accumulation of spin rotations associated with the electron hopping. Our result is larger but of the same order of magnitude than the experimental value. Therefore the proposed mechanism has to be included when describing spin relaxation in the impurity band.
arXiv comment4 pages
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- Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
- Distinguishing Spin Relaxation Mechanisms in Organic Semiconductors
- Spin relaxation near the metal-insulator transition: dominance of the Dresselhaus spin-orbit coupling
- Electrical spin orientation, spin-galvanic and spin-Hall effects in disordered two-dimensional systems
- Spin Relaxation in Materials Lacking Coherent Charge Transport
- Closing the gap between spatial and spin dynamics of electrons at the metal-to-insulator transition
- Charge and spin diffusion on the metallic side of the metal-insulator transition: a self-consistent approach
- Spin-relaxation time in the impurity band of wurtzite semiconductors
- Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors