94 citations · 481 across the 26 of their papers we have counts for
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Theory of Electrically Detected Magnetic Resonance of Silicon Vacancy-Related Spin Pairs in Silicon Carbide
David A. Fehr, Corey J. Cochrane, Stephen R. McMillan +3
We present a quantitative theory for simulating the electrically detected magnetic resonance (EDMR) of silicon vacancy-related spin pairs in silicon carbide using steady-state Lind…
Spin-Dependent Capture Mechanism for Magnetic Field Effects on Interface Recombination Current in Semiconductor Devices
Nicholas J. Harmon, James P. Ashton, Patrick M. Lenahan +1
Electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) are techniques that probe defect states at dielectric interfaces critical for metal-ox…
Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO interface
Nicholas J. Harmon, James P. Ashton, Patrick M. Lenahan +1
Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO MOS field effect transistor (MOSFET), possess trap states that can be…
Extraction of Isotropic Electron-Nuclear Hyperfine Coupling Constants of Paramagnetic Point Defects from Near-Zero Field Magnetoresistance Spectra via Least Squares Fitting to Models Developed from the Stochastic Quantum Liouville Equation
Elias B. Frantz, Nicholas J. Harmon Stephen R. McMillan, Stephen J. Moxim +2
We report on a method by which we can systematically extract spectroscopic information such as isotropic electron-nuclear hyperfine coupling constants from near-zero field magnetor…
Anomalous organic magnetoresistance from competing carrier-spin-dependent interactions with localized electronic and nuclear spins
Y. Wang, N. J. Harmon, K. Sahin-Tiras +2
We describe a new regime for low-field magnetoresistance in organic semiconductors, in which the spin-relaxing effects of localized nuclear spins and electronic spins interfere. Th…
Theory of Electron Spin Relaxation in ZnO
N. J. Harmon, W. O. Putikka, R. Joynt
Doped ZnO is a promising material for spintronics applications. For such applications, it is important to understand the spin dynamics and particularly the spin coherence of this I…