Spin-Dependent Capture Mechanism for Magnetic Field Effects on Interface Recombination Current in Semiconductor Devices

Abstract

Electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the Si/SiO${}_2$ MOS field effect transistor (MOSFET). A comprehensive theory, adapted from the trap-assisted recombination theory of Shockley, Read, and Hall, is introduced to include the spin-dependent recombination effects that provide the mechanism for magnetic field sensitivity.

accepted in Applied Physics Letters. arXiv admin note: substantial text overlap with arXiv:2008.08121