12 citations · 17 across the 6 of their papers we have counts for
6 papers
Theory of Electrically Detected Magnetic Resonance of Silicon Vacancy-Related Spin Pairs in Silicon Carbide
David A. Fehr, Corey J. Cochrane, Stephen R. McMillan +3
We present a quantitative theory for simulating the electrically detected magnetic resonance (EDMR) of silicon vacancy-related spin pairs in silicon carbide using steady-state Lind…
All Electrical Near-Zero Field Magnetoresistance Magnetometry up to 500 °C Using SiC Devices
F. Sgrignuoli, I. Viti, Z. G. Yu +6
Silicon Carbide is renowned for its exceptional thermal stability, making it a crucial material for high-temperature power devices in extreme environments. While optically detected…
Spin-Dependent Capture Mechanism for Magnetic Field Effects on Interface Recombination Current in Semiconductor Devices
Nicholas J. Harmon, James P. Ashton, Patrick M. Lenahan +1
Electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) are techniques that probe defect states at dielectric interfaces critical for metal-ox…
Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO interface
Nicholas J. Harmon, James P. Ashton, Patrick M. Lenahan +1
Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO MOS field effect transistor (MOSFET), possess trap states that can be…
Extraction of Isotropic Electron-Nuclear Hyperfine Coupling Constants of Paramagnetic Point Defects from Near-Zero Field Magnetoresistance Spectra via Least Squares Fitting to Models Developed from the Stochastic Quantum Liouville Equation
Elias B. Frantz, Nicholas J. Harmon Stephen R. McMillan, Stephen J. Moxim +2
We report on a method by which we can systematically extract spectroscopic information such as isotropic electron-nuclear hyperfine coupling constants from near-zero field magnetor…
Nature of traps responsible for failure of MOS devices
V. A. Gritsenko, P. M. Lenahan, Yu. N. Morokov +1
A failure of chips in a huge amount of modern electronic devices is connected as a rule with the undesirable capturing of charge (electrons and holes) by traps in a thin insulating…