most citedNear-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO interface

4 citations · 4 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2020★ 4 cited

Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO interface

Nicholas J. Harmon, James P. Ashton, Patrick M. Lenahan +1

Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO MOS field effect transistor (MOSFET), possess trap states that can be…