Spin relaxation in $n$-type GaAs quantum wells with transient spin grating

Abstract

By solving the kinetic spin Bloch equations, we study the time evolution of the transient spin grating, whose spin polarization varies periodically in real space, confined in (001) GaAs quantum wells. With this study we can investigate the properties of both the spin transport and the spin relaxation at the same time. The Fourier component of the spin signal decays double exponentially with two decay rates $1/{\tau }_{+}$ and $1/{\tau }_{-}$. In high temperature regime, the average of these two rates varies with the grating wave-vector $q$ quadratically, i.e., $(1/{\tau }_{+}+1/{\tau }_{-})/2=D_s{q}^2+1/{\tilde{\tau }}_s$, with $D_s$ and ${\tilde{\tau }}_s$ representing the spin diffusion coefficient and the average of the out-of-plane and the in-plane spin relaxation times respectively. ${\tau }_{\pm }$ calculated from our theory are in good agreement with the experimental data by Weber {\em et al.} [Phys. Rev. Lett. {\bf 98}, 076604 (2007)]. By comparing $D_s$ with and without the electron-electron Coulomb scattering, we calculate the contribution of Coulomb drag to the spin diffusion coefficient. With the transient spin grating result, we further reveal the relations among different characteristic parameters such as spin diffusion coefficient $D_s$, spin relaxation time ${\tau }_s$, and spin injection length $L_s$. We show that in the presence of the Dresselhaus and/or Rashba spin-orbit coupling, the widely used relation $L_s=\sqrt{D_s{\tau }_s}$ is generally inaccurate and can even be very wrong in some special cases. We present an accurate way to extract the steady-state transport characteristic parameters from the transient spin grating signals.

9 pages, 4 figures, to be published in JAP

References in corpus (5)

• High temperature spin dephasing in n-typed GaAs quantum wells
• Hot-electron effect in spin dephasing in $n$-type GaAs quantum wells
• Kinetic theory of spin transport in n-typed semiconductor quantum wells
• Anisotropic spin transport in GaAs quantum wells in the presence of competing Dresselhaus and Rashba spin-orbit-coupling strengths
• Diffusion and transport of spin pulses in an $n$-type semiconductor quantum well