Spin relaxation in -type GaAs quantum wells with transient spin grating
arXiv:0708.1975 · doi:10.1063/1.2899962
Abstract
By solving the kinetic spin Bloch equations, we study the time evolution of the transient spin grating, whose spin polarization varies periodically in real space, confined in (001) GaAs quantum wells. With this study we can investigate the properties of both the spin transport and the spin relaxation at the same time. The Fourier component of the spin signal decays double exponentially with two decay rates and . In high temperature regime, the average of these two rates varies with the grating wave-vector quadratically, i.e., , with and representing the spin diffusion coefficient and the average of the out-of-plane and the in-plane spin relaxation times respectively. calculated from our theory are in good agreement with the experimental data by Weber {\em et al.} [Phys. Rev. Lett. {\bf 98}, 076604 (2007)]. By comparing with and without the electron-electron Coulomb scattering, we calculate the contribution of Coulomb drag to the spin diffusion coefficient. With the transient spin grating result, we further reveal the relations among different characteristic parameters such as spin diffusion coefficient , spin relaxation time , and spin injection length . We show that in the presence of the Dresselhaus and/or Rashba spin-orbit coupling, the widely used relation is generally inaccurate and can even be very wrong in some special cases. We present an accurate way to extract the steady-state transport characteristic parameters from the transient spin grating signals.
9 pages, 4 figures, to be published in JAP
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Cited by in corpus (17)
- Emergence of the persistent spin helix in semiconductor quantum wells
- Spin dynamics in semiconductors
- Observation of exciton-exciton interaction mediated valley depolarization in monolayer MoSe
- Theory of coupled spin-charge transport due to spin-orbit interaction in inhomogeneous two-dimensional electron liquids
- Spin-Hall effect and spin-Coulomb drag in doped semiconductors
- Relaxation mechanisms of the persistent spin helix
- Electric-field induced spin excitations in two-dimensional spin-orbit coupled systems
- Spontaneous Emergence of Persistent Spin Helix from Homogeneous Spin Polarization
- Radial Spin Helix in Two-Dimensional Electron Systems with Rashba Spin-Orbit Coupling
- Kinetics of Spin Relaxation in Wires and Channels: Boundary Spin Echo and Tachyons
- Ambipolar spin transport in (111) GaAs quantum wells
- Infinite spin diffusion length of any spin polarization along direction perpendicular to effective magnetic field from Dresselhaus and Rashba spin-orbit couplings with identical strengths in (001) GaAs quantum wells
- Evolution of the persistent spin helix in the presence of Hartree-Fock fields
- Collective Spin-Hall Effect for Electron-Hole Gratings
- Microscopic theory for the Doppler velocimetry of spin propagation in semiconductor quantum wells
- Spin relaxation in Rashba rings
- Dynamics of Spin Relaxation in Finite-Size 2D Systems: an Exact Solution