Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures

Abstract

We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field dependences of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds the expected value of the giant Zeeman splitting by two orders of magnitude for a given Mn density. Possible reasons of this striking observation are discussed.

References in corpus (5)

• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
• Magneto-gyrotropic effects in semiconductor quantum wells (review)
• Electron-hole contribution to the apparent s-d exchange interaction in III-V diluted magnetic semiconductors
• Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system
• Magneto-Photoluminescence of InAs/InGaAs/InAlAs quantum well structures

Cited by in corpus (1)

• Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies