activity
20092023
most citedElectron spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition

71 citations · 187 across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mes-hall2023

Nonlinear helicity anomalies in the cyclotron resonance photoresistance of two-dimensional electron systems

Erwin Mönch, Sophia Schweiss, Ivan Yahniuk +7

Our studies of the cyclotron resonance (CR) photoresistance in GaAs-based two-dimensional electron systems (2DES) reveal an anomalously low sensitivity to the helicity of the incom…

cond-mat.mes-hall2018★ 2 cited

Electric-field modification of interfacial spin-orbit field-vector

L. Chen, M. Gmitra, M. Vogel +7

Current induced spin-orbit magnetic fields (iSOFs), arising either in single-crystalline ferromagnets with broken inversion symmetry1,2 or in non-magnetic metal/ferromagnetic metal…

cond-mat.mtrl-sci2017★ 41 cited

Gate-tunable large magnetoresistance in an all-semiconductor spin-transistor-like device

Martin Oltscher, Franz Eberle, Thomas Kuczmik +5

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for s…

cond-mat.quant-gas2016★ 4 cited

Overflow of a dipolar exciton trap at high magnetic fields

S. Dietl, K. Kowalik-Seidl, D. Schuh +3

We study laterally trapped dipolar exciton ensembles in coupled GaAs quantum wells at high magnetic fields in the Faraday configuration. In photoluminescence experiments, we identi…

cond-mat.mtrl-sci2016★ 10 cited

Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies

Ya. V. Terent'ev, S. N. Danilov, M. V. Durnev +5

Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. S…

cond-mat.mes-hall2016★ 1 cited

MIRO-like oscillations of magneto-resistivity in GaAs heterostructures induced by THz radiation

T. Herrmann, I. A. Dmitriev, D. A. Kozlov +12

We report on the study of terahertz radiation induced MIRO-like oscillations of magneto-resistivity in GaAs heterostructures. Our experiments provide an answer on two most intrigui…

cond-mat.mes-hall2015★ 2 cited

Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures

Ya. V. Terent'ev, S. N. Danilov, H. Plank +10

We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelect…

cond-mat.mes-hall2012★ 24 cited

Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation

P. Olbrich, C. Zoth, P. Lutz +11

We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by…

cond-mat.mes-hall2011★ 17 cited

Electron g-Factor Anisotropy in Symmetric (110)-oriented GaAs Quantum Wells

J. Hübner, S. Kunz, S. Oertel +6

We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise…

cond-mat.mes-hall2010★ 15 cited

Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation

C. Drexler, V. V. Bel'kov, B. Ashkinadze +10

We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The curren…

cond-mat.mes-hall2009★ 71 cited

Electron spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition

M. Römer, H. Bernien, G. Müller +3

We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for doping concentrations ranging f…