Electron spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition

Abstract

We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for doping concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16} cm^{-3} using spin noise spectroscopy. The temperature dependent measurements show a clear transition from localized to free electrons for the lower doped samples and confirm mainly free electrons at all temperatures for the highest doped sample. While the sample at the metal-insulator-transition shows the longest spin relaxation time at low temperatures, a clear crossing of the spin relaxation rates is observed at 70 K and the highest doped sample reveals the longest spin relaxation time above 70 K.

arXiv comment6 pages, 4 figures

References in corpus (12)

• Spintronics: Fundamentals and applications
• Electron spin relaxation by nuclei in semiconductor quantum dots
• Low-temperature spin relaxation in n-type GaAs
• Spectroscopy of spontaneous spin noise as a probe of spin dynamics and magnetic resonance
• Anisotropic exchange interaction of localized conduction-band electrons in semiconductor structures
• Spin noise spectroscopy in GaAs (110) quantum wells: Access to intrinsic spin lifetimes and equilibrium electron dynamics
• Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
• "Listening" to the spin noise of conduction electrons in bulk n:GaAs
• Spin relaxation of localized electrons in n-type semiconductors
• Dyakonov-Perel spin relaxation near metal-insulator transition and in hopping transport
• Bias-dependent electron spin lifetimes in n-GaAs and the role of donor impact ionization
• Theory of Optical Orientation in n-Type Semiconductors

Cited by in corpus (37)

• Spin dynamics in semiconductors
• Semiconductor Spin Noise Spectroscopy: Fundamentals, Accomplishments, and Challenges
• The Theory of Spin Noise Spectroscopy: A Review
• Spin-noise-based magnetometry of an $n$-doped GaAs microcavity in the field of elliptically polarized light
• Extended pump-probe Faraday rotation spectroscopy of the submicrosecond electron spin dynamics in n-type GaAs
• GHz Spin Noise Spectroscopy in n-Doped Bulk GaAs
• Nonequilibrium spin noise spectroscopy
• Spin relaxation near the metal-insulator transition: dominance of the Dresselhaus spin-orbit coupling
• Spatiotemporal spin fluctuations caused by spin-orbit-coupled Brownian motion
• Resources of polarimetric sensitivity in spin noise spectroscopy
• Higher Order Spin Noise Statistics
• Hole spin relaxation in intrinsic and $p$-type bulk GaAs
• Ultrafast supercontinuum fiber-laser based pump-probe scanning MOKE microscope for the investigation of electron spin dynamics in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution
• Effect of exchange interaction on the spin fluctuations of localized electrons
• Exciton spin noise in quantum wells
• Spin noise spectroscopy of donor bound electrons in ZnO
• Spin noise of localized electrons interacting with optically cooled nuclei
• Efficient Data Averaging for Spin Noise Spectroscopy in Semiconductors
• Quantum Interference Controls the Electron Spin Dynamics in n-GaAs
• Electron charge and spin delocalization revealed in the optically probed longitudinal and transverse spin dynamics in $n$-GaAs
• Long-lived nanosecond spin coherence in high-mobility 2DEGs confined in double and triple quantum wells
• Closing the gap between spatial and spin dynamics of electrons at the metal-to-insulator transition
• Spin Relaxation in GaAs: Importance of Electron-Electron Interactions
• Relaxation of Electron Spin during High-Field Transport in GaAs Bulk
• Multivalley spin relaxation in $n$-type bulk GaAs in the presence of high electric fields
• Tailoring multilayer quantum wells for spin devices
• Charge and spin diffusion on the metallic side of the metal-insulator transition: a self-consistent approach
• Subharmonic lock-in detection and its optimisation for femtosecond noise correlation spectroscopy
• Derivation of Electron Spin Relaxation Rate by Electron-Phonon Interaction Using a New Diagram Method
• Spin transport and accumulation in the persistent photoconductor Al${}_{0.3}$Ga${}_{0.7}$As
• Spin decoherence in n-type GaAs: the effectiveness of the third-body rejection method for electron-electron scattering
• Charge and spin transport over record distances in GaAs metallic n-type nanowires : II nonlinear charge transport
• Charge and spin transport over record distances in GaAs metallic n-type nanowires : I photocarrier transport in a dense Fermi sea
• Time-resolved lateral spin-caloric transport of optically generated spin packets in n-GaAs
• Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors
• Electron Spin Dephasing and Optical Pumping of Nuclear Spins in GaN
• Tuning Spin Dynamics and Localization Near the Metal-Insulator Transition in Fe/GaAs heterostructures