most citedElectron spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition

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cond-mat.mes-hall2009★ 71 cited

Electron spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition

M. Römer, H. Bernien, G. Müller +3

We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for doping concentrations ranging f…