Quantitative theory of backscattering in topological HgTe and (Hg,Mn)Te quantum wells: acceptor states, Kondo effect, precessional dephasing, and bound magnetic polaron
arXiv:2209.03283 · doi:10.1103/PhysRevB.107.085421
Abstract
We present the theory and numerical evaluations of the backscattering rate determined by acceptor holes or Mn spins in HgTe and (Hg,Mn)Te quantum wells in the quantum spin Hall regime. The role of anisotropic s-p and sp-d exchange interactions, Kondo coupling, Luttinger liquid effects, precessional dephasing, and bound magnetic polarons is quantified. The determined magnitude and temperature dependence of conductance are in accord with experimental results for HgTe and (Hg,Mn)Te quantum wells.
12 pages, 8 figures, companion paper to arXiv:2206.01613, Phys. Rev. Lett. 130, 086202 (2023).; v2 contains modifications resulting from the review process
References in corpus (18)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Nonlocal edge state transport in the quantum spin Hall state
- Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
- Kondo effect in the helical edge liquid of the quantum spin Hall state
- Kondo effect in quantum dots
- Edge Dynamics in a Quantum Spin Hall State: Effects from Rashba Spin-Orbit Interaction
- Conductance of a helical edge liquid coupled to a magnetic impurity
- Resistance of helical edges formed in a semiconductor heterostructure
- Renormalization group approach for the scattering off a single Rashba impurity in a helical liquid
- Kondo decoherence: finding the right spin model for iron impurities in gold and silver
- Spontaneous breakdown of topological protection in two dimensions
- Strain Engineering of the Band Gap of HgTe Quantum Wells using Superlattice Virtual Substrates
- Magnetic field induced localization in 2D topological insulators
- Universal dephasing rate due to diluted Kondo impurities
- Electron-hole contribution to the apparent s-d exchange interaction in III-V diluted magnetic semiconductors
- Effects of charge dopants in quantum spin Hall materials
- Spin dynamics of a confined electron interacting with magnetic or nuclear spins: A semiclassical approach
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- Interaction- and phonon-induced topological phase transitions in double helical liquids
- Interplay between strain and size quantization in a class of topological insulators based on inverted-band semiconductors
- Role of magnetic doping in topological HgTe and application of the Gram-Schmidt method for computing impurity states in quantum wells