activity
19972016
most citedHole-mediated ferromagnetism in tetrahedrally coordinated semiconductors

1.5k citations · 2.3k across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mtrl-sci2016★ 2 cited

Comment on "Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]" by M. Kobayashi et al., arXiv:1608.07718

S. Souma, L. Chen, R. Oszwałdowski +5

Recently, Kobayashi et al. (arXiv:1608.07718; ref. 1) have proposed an alternative interpretation of our angle-resolved photoemission spectroscopy (ARPES) results for the dilute fe…

cond-mat.mtrl-sci2011★ 75 cited

Anomalous Hall effect in field-effect structures of (Ga,Mn)As

D. Chiba, A. Werpachowska, M. Endo +4

The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by…

cond-mat.mtrl-sci2009★ 140 cited

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

K. Mizunuma, S. Ikeda, J. H. Park +7

The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with…

cond-mat.mtrl-sci2006★ 242 cited

Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As

M. Yamanouchi, D. Chiba, F. Matsukura +2

Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicula…

cond-mat.mtrl-sci2006★ 86 cited

Domain-wall resistance in ferromagnetic (Ga,Mn)As

D. Chiba, M. Yamanouchi, F. Matsukura +2

A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributi…

cond-mat.mtrl-sci2001★ 94 cited

Ferromagnetism of magnetic semiconductors--Zhang-Rice limit

T. Dietl, F. Matsukura, H. Ohno

It is suggested that p-d hybridization contributes significantly to the hole binding energy E_b of Mn acceptors in III-V compounds, leading in an extreme case to the formation of Z…

cond-mat.mtrl-sci2000★ 1.5k cited

Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors

T. Dietl, H. Ohno, F. Matsukura

A mean field model of ferromagnetism mediated by delocalized or weakly localized holes in zinc-blende and wurzite diluted magnetic semiconductors is presented. The model takes into…

cond-mat.mes-hall1998★ 36 cited

Interlayer Coherence in the and Bilayer Quantum Hall States

A. Sawada, Z. F. Ezawa, H. Ohno +6

We have measured the Hall-plateau width and the activation energy of the bilayer quantum Hall (BLQH) states at the Landau-level filling factor and 2 by tilting the sample and…

cond-mat.mes-hall1998★ 108 cited

Phase Transition in ν=2 Bilayer Quantum Hall State

A. Sawada, Z. F. Ezawa, H. Ohno +6

The Hall-plateau width and the activation energy were measured in the bilayer quantum Hall state at filling factor ν=2, 1 and 2/3, by changing the total electron density and the de…

cond-mat.mes-hall1997★ 12 cited

Anomalous Stability of nu=1 Bilayer Quantum Hall State

A. Sawada, Z. F. Ezawa, H. Ohno +6

We have studied the fractional and integer quantum Hall (QH) effects in a high-mobility double-layer two-dimensional electron system. We have compared the "stability" of the QH sta…