Evidence for Carrier-Induced High-Tc Ferromagnetism in Mn-doped GaN film

Abstract

A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization measurements show that this highly Mn-doped GaN film exhibits ferromagnetism above room temperature. It is also revealed that the high-temperature ferromagnetic state is significantly suppressed below 10 K, accompanied by an increase of the electrical resistivity with decreasing temperature. This observation clearly demonstrates a close relation between the ferromagnetism with extremely high-Tc and the carrier transport in the Mn-doped GaN film.

arXiv comment9 pages, 3 figures

References in corpus (5)

• Molecular Beam Epitaxy of Wurtzite (Ga,Mn)N Films on Sapphire(0001) Showing the Ferromagnetic Behaviour at Room Temperature
• Electronic structure and magnetism of Mn doped GaN
• Ferromagnetism of magnetic semiconductors--Zhang-Rice limit
• High TC ferromagnetism in diluted magnetic semiconducting GaN:Mn films
• Properties of Ferromagnetic Ga1-xMnxN Films Grown by Ammonia-MBE

Cited by in corpus (1)

• Nitrogen defects and ferromagnetism of Cr-doped AlN diluted magnetic semiconductor from first principles