activity
20012006
most citedMolecular Beam Epitaxy of Wurtzite (Ga,Mn)N Films on Sapphire(0001) Showing the Ferromagnetic Behaviour at Room Temperature

409 citations · 551 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2006★ 17 cited

Awaking of ferromagnetism in GaMnN through control of Mn valence

Saki Sonoda, Isao Tanaka, Fumiyasu Oba +10

Room temperature ferromagnetism of GaMnN thin films is awaked by a mild hydrogenation treatment of samples synthesized by molecular beam epitaxy. Local environment of Mn atoms is m…

cond-mat.mtrl-sci2006

A possible model to high TC ferromagnetism in Gallium Manganese Nitrides based on resonation properties of impurities in semiconductors

H. Hori, Y. Yamamoto, S. Sonoda

The high TC ferromagnetism in (Ga,Mn)N were observed and almost all results are approximately similar to the experimental results in (Ga,Mn)As except the value of TC. Though all st…

cond-mat.str-el2006★ 6 cited

Evidence for Carrier-Induced High-Tc Ferromagnetism in Mn-doped GaN film

S. Yoshii, S. Sonoda, T. Yamamoto +6

A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization measurements show that this highly Mn-doped GaN film exhibits ferromagnetism above r…

cond-mat.mtrl-sci2005★ 1 cited

Intrinsic mechanism for high temperature ferromagnetism in GaMnN

Saki Sonoda, Isao Tanaka, Hidekazu Ikeno +9

Considerable efforts have been devoted recently to synthesize diluted magnetic semiconductors having ferromagnetic properties at room temperature because of their technological imp…

cond-mat.mtrl-sci2002★ 25 cited

Properties of Ferromagnetic Ga1-xMnxN Films Grown by Ammonia-MBE

Saki Sonoda, Hidenobu Hori, Yoshiyuki Yamamoto +5

Using ammonia as nitrogen source for molecular beam epitaxy, the GaN-based diluted magnetic semiconductor Ga1-xMnxN is successfully grown with Mn concentration up to x~6.8% and wit…

cond-mat.mtrl-sci2002★ 93 cited

High TC ferromagnetism in diluted magnetic semiconducting GaN:Mn films

H. Hori, S. Sonoda, T. Sasaki +4

Wurtzite GaN:Mn films on sapphire substrates were successfully grown by use of the molecular beam epitaxy (MBE) system. The film has an extremely high Curie temperature of around 9…

cond-mat.mtrl-sci2001★ 409 cited

Molecular Beam Epitaxy of Wurtzite (Ga,Mn)N Films on Sapphire(0001) Showing the Ferromagnetic Behaviour at Room Temperature

S. Sonoda, S. Shimizu, T. Sasaki +2

Wurtzite (Ga,Mn)N films showing ferromagnetic behaviour at room temperature were successfully grown on sapphire(0001) substrates by molecular beam epitaxy using ammonia as nitrogen…