A possible model to high TC ferromagnetism in Gallium Manganese Nitrides based on resonation properties of impurities in semiconductors

Abstract

The high TC ferromagnetism in (Ga,Mn)N were observed and almost all results are approximately similar to the experimental results in (Ga,Mn)As except the value of TC. Though all standard experiments on magnetism clearly support the results, the value is unexpectedly high. This work present and discuss the possibility of high TC ferromagnetism, after brief review of the experimental results. The key speculation to Bosonization method in three dimensions is resembled with the problems in Anderson localization.

arXiv comment18 pages, 6 figures, presented in NATO advanced workshop "Electron Correlation in New Materials and Nanosystems". To be published in NATO ARW proceedings

References in corpus (3)

• Molecular Beam Epitaxy of Wurtzite (Ga,Mn)N Films on Sapphire(0001) Showing the Ferromagnetic Behaviour at Room Temperature
• Nature of Well-Screened State in Hard X-ray Mn 2$p$ Core-Level Photoemission of La${}_{1-x}$Sr${}_x$MnO${}_3$ Films
• High TC ferromagnetism in diluted magnetic semiconducting GaN:Mn films