Response to the comment of K.W. Edmonds et al. on the article 'Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band'

Abstract

Although we seriously disagree with many of the points raised in the comment by Edmonds et al., we feel that it is valuable and timely, since comparison of this comment and our paper serves to underscore an important property of the ferromagnetic semiconductor (Ga,Mn)As in thin film form.

References in corpus (5)

• Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors
• Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers
• Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band
• Achieving High Curie Temperature in (Ga,Mn)As
• Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As

Cited by in corpus (1)

• Electron correlations in Mn${}_x$Ga${}_{1-x}$As as seen by resonant electron spectroscopy and dynamical mean field theory