activity
20002023
most citedConductance of Pd-H nanojunctions

111 citations · 559 across the 29 of their papers we have counts for

collaborators

30 papers

cond-mat.mes-hall2023★ 1 cited

Noise tailoring, noise annealing and external noise injection strategies in memristive Hopfield neural networks

János Gergő Fehérvári, Zoltán Balogh, Tímea Nóra Török +1

The commercial introduction of a novel electronic device is often preceded by a lengthy material optimization phase devoted to the suppression of device noise as much as possible.…

cond-mat.mes-hall2023★ 1 cited

Neural information processing and time-series prediction with only two dynamical memristors

Dániel Molnár, Tímea Nóra Török, János Volk +9

Memristive devices are commonly benchmarked by the multi-level programmability of their resistance states. Neural networks utilizing memristor crossbar arrays as synaptic layers la…

cond-mat.mes-hall2023

Voltage-time dilemma and stochastic threshold voltage variation in pure silver atomic switches

Anna Nyáry, Zoltán Balogh, Máté Vigh +3

The formation and dissolution of silver nanowires plays a fundamental role in a broad range of resistive switching devices, fundamentally relying on the electrochemical metallizati…

cond-mat.mes-hall2023★ 5 cited

Quantum transport properties of tantalum-oxide resistive switching filaments

Tímea Nóra Török, Péter Makk, Zoltán Balogh +2

Filamentary resistive switching devices are not only considered as promising building blocks for brain-inspired computing architectures, but they also realize an unprecedented oper…

cond-mat.mes-hall2022★ 26 cited

Picosecond Time-Scale Resistive Switching Monitored in Real-Time

Miklós Csontos, Yannik Horst, Nadia Jimenez Olalla +4

The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the techn…

cond-mat.mes-hall2021

1/f noise spectroscopy and noise tailoring of nanoelectronic devices

Zoltán Balogh, Gréta Mezei, László Pósa +3

In this paper, we review the 1/f-type noise properties of nanoelectronic devices focusing on three demonstrative platforms: resistive switching memories, graphene nanogaps and sing…