Challenges to magnetic doping of thin films of the Dirac semimetal CdAs
arXiv:2112.12117 · doi:10.1103/PhysRevMaterials.6.024203
Abstract
Magnetic doping of topological quantum materials provides an attractive route for studying the effects of time-reversal symmetry breaking. Thus motivated, we explore the introduction of the transition metal Mn into thin films of the Dirac semimetal Cd3As2 during growth by molecular beam epitaxy. Scanning transmission electron microscopy measurements show the formation of a Mn-rich phase at the top surface of Mn-doped Cd3As2 thin films grown using both uniform doping and delta doping. This suggests that Mn acts as a surfactant during epitaxial growth of Cd3As2, resulting in phase separation. Magnetometry measurements of such samples indicate a ferromagnetic phase with out-of-plane magnetic anisotropy. Electrical magneto-transport measurements of these films as a function of temperature, magnetic field, and chemical potential reveal a lower carrier density and higher electron mobility compared to pristine Cd3As2 films grown under similar conditions. This suggests that the surfactant effect might also serve to getter impurities. We observe robust quantum transport (Shubnikov-de Haas oscillations and an incipient integer quantum Hall effect) in very thin (7 nm) Cd3As2 films despite being in direct contact with a structurally disordered surface ferromagnetic overlayer.
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Cited by in corpus (5)
- Engineering the in-plane anomalous Hall effect in CdAs thin films
- Influence of magnetic and electric fields on universal conductance fluctuations in thin films of the Dirac semi-metal Cd3As2
- Doping Topological Dirac Semimetal with magnetic impurities: electronic structure of Mn-doped CdAs
- Designing Phase Sensitive Probes of Monopole Superconducting Order
- Constraints on proximity-induced ferromagnetism in a Dirac semimetal (CdAs)/ferromagnetic semiconductor (GaMnSb) heterostructure