activity
20182021
collaborators

7 papers

cond-mat.mtrl-sci2021

Direct observation and consequences of dopant segregation inside and outside dislocation cores in perovskite BaSnO3

Hwanhui Yun, Abhinav Prakash, Turan Birol +2

Distinct dopant behaviors inside and outside dislocation cores are identified by atomic-resolution electron microscopy in perovskite BaSnO3 with considerable consequences on local…

cond-mat.mtrl-sci2020

Self-Assembled Periodic Nanostructures Using Martensitic Phase Transformations

Abhinav Prakash, Tianqi Wang, Ashley Bucsek +11

We describe a novel approach for the rational design and synthesis of self-assembled periodic nanostructures using martensitic phase transformations. We demonstrate this approach i…

cond-mat.mtrl-sci2019

STEM beam channeling in BaSnO3/LaAlO3 perovskite bilayers and visualization of 2D misfit dislocation network

Hwanhui Yun, Abhinav Prakash, Bharat Jalan +2

A study of the STEM probe channeling in a heterostructures crystalline specimen is presented here with a goal to guide appropriate STEM-based characterization for complex structure…

cond-mat.mtrl-sci2018

Large-scale defects hidden inside a topological insulator grown onto a 2D substrate

Danielle Reifsnyder Hickey, Ryan J. Wu, Joon Sue Lee +7

Topological insulator (TI) materials are exciting candidates for integration into next-generation memory and logic devices because of their potential for efficient, low-energy-cons…

cond-mat.mtrl-sci2018

Sub-Atomic Channeling and Vortex Beams in SrTiO

Jong Seok Jeong, Hosup Song, Jacob T. Held +1

Inspired by recent experimental sub-atomic measurements using analytical aberration-corrected scanning transmission electron microscopes (STEMs), we studied electron probe propagat…

cond-mat.mtrl-sci2018

An Inside Look at the Ti-MoS2 Contact in Ultra-thin Field Effect Transistor with Atomic Resolution

Ryan J. Wu, Sagar Udyavara, Rui Ma +5

Two-dimensional molybdenum disulfide (MoS2) is an excellent channel material for ultra-thin field effect transistors. However, high contact resistance across the metal-MoS2 interfa…