Absence of signatures of Weyl orbits in the thickness dependence of quantum transport in cadmium arsenide

Abstract

In a Weyl orbit, the Fermi arc surface states on opposite surfaces of the topological semimetal are connected through the bulk Weyl or Dirac nodes. Having a real-space component, these orbits accumulate a sample-size-dependent phase. Following recent work on the three-dimensional Dirac semimetal cadmium arsenide (Cd3As2), we have sought evidence for this thickness-dependent effect in quantum oscillations and quantum Hall plateaus in (112)-oriented Cd3As2 thin films grown by molecular beam epitaxy. We compare quantum transport in films of varying thickness at apparently identical gate-tuned carrier concentrations and find no clear dependence of the relative phase of the quantum oscillations on the sample thickness. We show that small variations in carrier densities, difficult to detect in low-field Hall measurements, lead to shifts in quantum oscillations that are commensurate with previously reported phase shifts. Future claims of Weyl orbits based on the thickness dependence of quantum transport data require additional studies that demonstrate that these competing effects have been disentangled.

References in corpus (4)

• Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2
• Observation of the quantum Hall effect in confined films of the three-dimensional Dirac semimetal Cd3As2
• Quantum Hall states observed in thin films of Dirac semimetal Cd3As2
• Topological tuning in three-dimensional Dirac semimetals

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• Challenges to magnetic doping of thin films of the Dirac semimetal Cd${}_3$As${}_2$
• Quantum Hall effect induced by chiral Landau levels in topological semimetal films
• Weyl orbits without an external magnetic field
• Quantum Oscillation Signatures of Fermi Arcs in Tunnel Magnetoconductance
• Anomalous electronic energy relaxation and soft phonons in the Dirac semimetal Cd${}_3$As${}_2$
• Dimensionality-dependent type-II Weyl semimetal state in Mo${}_{0.25}$W${}_{0.75}$Te${}_2$
• Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd${}_3$As${}_2$)/ferromagnetic semiconductor (Ga${}_{1-x}$Mn${}_x$Sb) heterostructure