Integer quantum Hall effect and enhanced g-factor in quantum confined Cd3As2 films

Abstract

We investigate the integer quantum Hall effect in Cd3As2 thin films under conditions of strong to moderate quantum confinement (thicknesses of 10 nm, 12 nm, 15 nm). In all the films, we observe the integer quantum Hall effect in the spin-polarized lowest Landau level (filling factor ν = 1) and at spin-degenerate higher index Landau levels with even filling factors (ν = 2,4,6). With increasing quantum confinement, we also observe a lifting of the Landau level spin degeneracy at ν = 3, manifest as the emergence of an anomaly in the longitudinal and Hall resistivity. Tight-binding calculations show that the enhanced g-factor likely arises from a combination of quantum confinement and corrections from nearby subbands. We also comment on the magnetic field induced transition from an insulator to a quantum Hall liquid when the chemical potential is near the charge neutrality point.

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Cited by in corpus (4)

• Zeeman field-induced two-dimensional Weyl semimetal phase in cadmium arsenide
• Influence of magnetic and electric fields on universal conductance fluctuations in thin films of the Dirac semi-metal Cd3As2
• Anomalous electronic energy relaxation and soft phonons in the Dirac semimetal Cd${}_3$As${}_2$
• Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd${}_3$As${}_2$)/ferromagnetic semiconductor (Ga${}_{1-x}$Mn${}_x$Sb) heterostructure