Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd${}_3$As${}_2$)/ferromagnetic semiconductor (Ga${}_{1-x}$Mn${}_x$Sb) heterostructure

Abstract

Breaking time-reversal symmetry in a Dirac semimetal Cd${}_3$As${}_2$ through doping with magnetic ions or by the magnetic proximity effect is expected to cause a transition to other topological phases (such as a Weyl semimetal). To this end, we investigate the possibility of proximity-induced ferromagnetic ordering in epitaxial Dirac semimetal (Cd${}_3$As${}_2$)/ferromagnetic semiconductor (Ga${}_{1-x}$Mn${}_x$Sb) heterostructures grown by molecular beam epitaxy. We report the comprehensive characterization of these heterostructures using structural probes (atomic force microscopy, x-ray diffraction, scanning transmission electron microscopy), angle-resolved photoemission spectroscopy, electrical magneto-transport, magnetometry, and polarized neutron reflectometry. Measurements of the magnetoresistance and Hall effect in the temperature range 2 K - 20 K show signatures that could be consistent with either a proximity effect or spin-dependent scattering of charge carriers in the Cd${}_3$As${}_2$ channel. Polarized neutron reflectometry sets constraints on the interpretation of the magnetotransport studies by showing that (at least for temperatures above 6 K) any induced magnetization in the Cd${}_3$As${}_2$ itself must be relatively small ($<$ 14 emu/cm${}^3$).

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• Dirac materials
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Cited by in corpus (1)

• Thin film growth of the Weyl semimetal NbAs