Quasi two-dimensional carriers in dilute-magnetic-semiconductor quantum wells under in-plane magnetic field

Abstract

Due to the competition between spatial and magnetic confinement, the density of states of a quasi two-dimensional system deviates from the ideal step-like form both quantitatively and qualitatively. We study how this affects the spin-subband populations and the spin-polarization as functions of the temperature, $T$, and the in-plane magnetic field, $B$, for narrow to wide dilute-magnetic-semiconductor quantum wells. We focus on the quantum well width, the magnitude of the spin-spin exchange interaction, and the sheet carrier concentration dependence. We look for ranges where the system is completely spin-polarized. Increasing $T$, the carrier spin-splitting, $U_{o\sigma }$, decreases, while increasing $B$, $U_{o\sigma }$ increases. Moreover, due to the density of states modification, all energetically higher subbands become gradually depopulated.

3 pages, 3 figures

References in corpus (6)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Ferromagnetic Semiconductors: Moving Beyond (Ga,Mn)As
• Monte Carlo simulations of ferromagnetism in p-CdMnTe quantum wells
• Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field
• Density of states and electron concentration of double heterojunctions subjected to an in-plane magnetic field
• Spin-subband populations and spin polarization of quasi two-dimensional carriers under in-plane magnetic field

Cited by in corpus (1)

• Purely orbital diamagnetic to paramagnetic fluctuation of quasi two-dimensional carriers under in-plane magnetic field