Anomalous Hall effect in two-phase semiconductor structures: the crucial role of ferromagnetic inclusions

Abstract

The Hall effect in InMnAs layers with MnAs inclusions of 20-50 nm in size is studied both theoretically and experimentally. We find that the anomalous Hall effect can be explained by the Lorentz force caused by the magnetic field of ferromagnetic inclusions and by an inhomogeneous distribution of the current density in the layer. The hysteretic dependence of the average magnetization of ferromagnetic inclusions on an external magnetic field results in a hysteretic dependence of RH(Hext). Thus we show the possibility of a hysteretic RH(Hext) dependence (i.e. observation of the anomalous Hall effect) in thin conductive layers with ferromagnetic inclusions in the absence of carriers spin polarization.

Cited by in corpus (4)

• Spinodal nanodecomposition in magnetically doped semiconductors
• High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor
• Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position
• On the magnetism of the C14 Nb0.975Fe2.025 Laves phase compound: Determination of the H-T phase diagram