Optically discriminating carrier-induced quasiparticle band gap and exciton energy renormalization in monolayer MoS2
arXiv:1712.00820 · doi:10.1103/PhysRevLett.119.087401
Abstract
Optoelectronic excitations in monolayer MoS2 manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena - critical to both many-body physics exploration and device applications - presents challenges, however, due to a complex balance of competing optoelectronic effects and interdependent properties. Here, optical detection of bound- and free-carrier photoexcitations is used to directly quantify carrier-induced changes of the quasiparticle band gap and exciton binding energies. The results explicitly disentangle the competing effects and highlight longstanding theoretical predictions of large carrier-induced band gap and exciton renormalization in 2D semiconductors.
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- Many-body theory of optical absorption in doped two-dimensional semiconductors
- Quasiparticle band-gap renormalization in doped monolayer MoS
- Ultra Localized Optoelectronic Properties of Nanobubbles in 2D Semiconductors
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- Direct Nano-Imaging of Light-Matter Interactions in Nanoscale Excitonic Emitters
- Theory of coherent phonons coupled to excitons
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- Retrieval of fundamental material parameters of monolayer transition metal dichalcogenides from experimental exciton energies: An analytical approach
- Exciton self-trapping causes picoseconds recombination in metal-organic chalcogenides hybrid quantum wells